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ikp20n60t trenchstop ? series ifag ipc td vls 1 rev. 2.8 18.05.2015 low loss duopack : igbt in trenchstop ? and fieldstop technology with soft, f ast recovery anti - parallel emitter controlled he diode features : ? very low v ce(sat) 1.5 v (typ.) ? m aximum junction temperature 175 c ? short circuit withs tand time 5 ? s ? designed for : - frequency converters - uninterrupted power supply ? trenchstop ? a nd fieldstop technology for 600 v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low v ce(sat) ? p ositive temperature coefficient in v ce(sat) ? low emi ? low gate charge ? very soft, f ast recovery anti - parallel emitter controlled he diode ? qualified according to jedec 1 for target applications ? pb - free lead plating; rohs compliant ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ),tj=25c t j,max marking package ikp20n60t 600v 20a 1.5v 175 ? maximum ratings parameter symbo l value unit collector - emitter voltage , t j 25 ? c v ce 600 v dc collector current , limited by t jmax t c = 25 ? c t c = 100 ? c i c 4 1 2 8 a pulsed collector current, t p limited by t jmax i c p u l s 60 turn off safe operating area, v ce = 600v, t j = 175 ? c, t p = 1s - 60 diode forward current, limited by t jmax t c = 25 ? c t c = 100 ? c i f 4 1 2 8 diode pulsed current, t p limited by t jmax i f p u l s 60 gate - emitter voltage v ge ? 20 v short circuit wit hstand time 2 ) v ge = 15v, v cc ? 40 0v, t j ? 150 ? c t sc 5 ? s power dissipation t c = 25 ? c p t o t 166 w operating junction temperature t j - 40...+ 175 ? c storage temperature t s t g - 55...+ 1 5 0 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1 j - std - 020 and jesd - 022 2 ) allowed number of short circuits: <1000; time between short circuits: >1s. pg - to220 - 3 g c e
ikp20n60t trenchstop ? series ifag ipc td vls 2 rev. 2.8 18.05.2015 t hermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction C case r t h j c 0.9 k/w diode thermal resistance, junction C case r t h j c d 1.5 thermal resistance, junction C ambient r t h j a 62 electri cal characteristic, at t j = 25 ? c, unless otherwise specified parameter symbol conditions value unit min. t yp. max. static characteristic collector - emitter breakdown voltage v ( b r ) c e s v ge = 0v , i c = 0. 2 ma 600 - - v collector - emitter saturation voltage v c e ( s a t ) v ge = 15 v , i c = 20 a t j =2 5 ? c t j =1 7 5 ? c - - 1. 5 1. 9 2 .05 - diode forward voltage v f v ge = 0v , i f = 20 a t j =2 5 ? c t j =1 7 5 ? c - - 1. 65 1.6 2 .05 - gate - emitter threshold voltage v g e ( t h ) i c = 29 0 a, v ce = v ge 4. 1 4. 9 5.7 zero gate voltage collector curren t i c e s v ce = 6 00v , v ge = 0v t j =2 5 ? c t j =1 7 5 ? c - - - - 40 15 00 a gate - emitter leakage current i g e s v ce = 0v , v ge =2 0 v - - 100 na transconductance g fs v ce = 20 v , i c = 20 a - 11 - s integrated gate resistor r g i n t - dynamic characteristic input capacitance c i s s v ce = 25 v , v ge = 0v , f = 1 mh z - 1100 - pf output capacitance c o s s - 71 - reverse transfer capacitance c r s s - 32 - gate charge q g a t e v cc = 48 0 v, i c = 20 a v ge = 15 v - 120 - nc internal emitter inductance measu red 5mm (0.197 in.) from case l e pg - t o 220 - 3 - 7 - nh short circuit collector current 1 ) i c ( s c ) v ge = 15 v , t sc ? 5 ? s v c c = 4 0 0 v, t j ? 150 ? c - 183.3 - a 1 ) allowed number of short circuits: <1000; time between short circuits: >1s.
ikp20n60t trenchstop ? series ifag ipc td vls 3 rev. 2.8 18.05.2015 switching characteristic, inductive load, at t j =25 ? c parameter symbol conditions value unit min. t yp . max. igbt characteristic turn - on delay time t d ( o n ) t j = 2 5 ? c, v cc = 4 0 0 v, i c = 2 0 a, v ge = 0 / 1 5 v , r g = 1 2 ? , l ? = 1 3 1 n h , c ? = 3 1 pf l ? , c ? f r o m f i g . e energy losses include tail and diode reverse recovery. - 18 - ns rise time t r - 14 - turn - off delay time t d ( o f f ) - 199 - fall time t f - 42 - turn - on energy e on - 0.31 - mj turn - off energy e o f f - 0.46 - total switching energy e ts - 0.77 - anti - parallel diode characteristic diode reverse recovery time t rr t j =2 5 ? c, v r = 4 00 v , i f = 20 a, di f /dt = 88 0 a/ ? s - 41 - ns diode reverse recovery charge q rr - 0.31 - c diode peak reverse recovery current i r r m - 13.3 - a diode peak rate of fall of reverse recovery current during t b di rr /d t - 711 - a/ ? s switching characteristic, inductive load, at t j = 1 75 ? c parameter sy mbol conditions value unit min. t yp. max. igbt characteristic turn - on delay time t d ( o n ) t j = 1 7 5 ? c, v cc = 4 0 0 v, i c = 2 0 a, v ge = 0 / 1 5 v , r g = 1 2 ? , l ? = 1 3 1 n h , c ? = 3 1 pf l ? , c ? f r o m f i g . e energy losses include tail and diode reverse recovery. - 18 - ns rise time t r - 18 - turn - off delay time t d ( o f f ) - 223 - fall time t f - 76 - turn - on energy e on - 0.51 - mj turn - off energy e o f f - 0.64 - total switching energy e ts - 1.15 - anti - parallel diode characteristic diode reverse recovery time t rr t j =1 7 5 ? c v r = 4 00 v , i f = 20 a, di f /dt =8 8 0 a/ ? s - 176 - ns diode reverse recovery charge q rr - 1.46 - c diode peak reverse recovery current i r r m - 18.9 - a diode peak rate of fall of reverse recovery current during t b di rr /d t - 467 - a/ ? s
ikp20n60t trenchstop ? series ifag ipc td vls 4 rev. 2.8 18.05.2015 i c , collector curr ent i c , collector current f , switching frequency v ce , collector - emitter voltage figure 1 . collector current as a function of switching frequency ( t j ? 175 ? c, d = 0.5, v ce = 400v, v ge = 0/ 15v, r g = 12 ? ) figure 2 . safe operating area ( d = 0, t c = 25 ? c, t j ? 175 ? c; v ge = 0/ 15v) p tot , power dissipation i c , collector current t c , case tem perature t c , case temperature figure 3 . power dissipation as a function of case temperature ( t j ? 175 ? c) figure 4 . collector current as a function of case temperature ( v ge ? 15v, t j ? 175 ? c) 10hz 100hz 1khz 10khz 100khz 0a 10a 20a 30a 40a 50a 60a t c =110c t c =80c 1v 10v 100v 1000v 0.1a 1a 10a 10s 1ms dc t p =2s 50s 10ms 25c 50c 75c 100c 125c 150c 0w 20w 40w 60w 80w 100w 120w 140w 160w 25c 50c 75c 100c 125c 150c 0a 10a 20a 30a 40a i c i c
ikp20n60t trenchstop ? series ifag ipc td vls 5 rev. 2.8 18.05.2015 i c , collec tor current i c , collector current v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5 . typical output characteristic ( t j = 25c) figure 6 . typical output characteristic ( t j = 175c) i c , collector current v ce(sat), collector - emitt saturation vol tage v ge , gate - emitter voltage t j , junction temperature figure 7 . typical transfer characteristic (v ce = 1 0v) figure 8 . typical collector - emitter saturation voltage as a function of junction temperature ( v ge = 15v) 0v 1v 2v 3v 0a 10a 20a 30a 40a 50a 15v 7v 9v 11v 13v v ge =20v 0v 1v 2v 3v 4v 0a 10a 20a 30a 40a 50a 15v 13v 7v 9v 11v v ge =20v 0v 2v 4v 6v 8v 0a 5a 10a 15a 20a 25a 30a 35a 25c t j =175c 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 2.5v i c =20a i c =40a i c =10a
ikp20n60t trenchstop ? series ifag ipc td vls 6 rev. 2.8 18.05.2015 t, switching times t, switching times i c , collector current r g , gate resistor figure 9 . typical switching times as a function of collector current (inductive load, t j =175c, v ce = 400v, v ge = 0/15v, r g = 12 ?, figure 10 . typical switching times as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 20 a, dynamic test circuit in figure e) t, switching times v ge(th ) , gate - emitt trshold voltag e t j , junction temperature t j , junction temperature figure 11 . typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 2 0a, r g =12 ?, figure 12 . gate - emitter threshold voltage as a function of junction temperature ( i c = 0.29 ma) 0a 5a 10a 15a 20a 25a 30a 35a 1ns 10ns 100ns t r t d(on) t f t d(off) ??? ??? ??? ??? ??? ??? ??? 10ns 100ns t r t d(on) t f t d(off) 25c 50c 75c 100c 125c 150c 10ns 100ns t r t d(on) t f t d(off) -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v 7v m in. typ. m ax.
ikp20n60t trenchstop ? series ifag ipc td vls 7 rev. 2.8 18.05.2015 e , switching energy los ses e , switching energy los ses i c , collector current r g , gate resistor figure 13 . typical switching energy losses as a function of collector current (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, r g = 12 ?, figure 14 . typical switching energy losses as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 2 0a, dynamic test circuit in figure e) e , switching energy los ses e , switching energy los ses t j , junction temperature v ce , collector - emitter voltage figure 15 . typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 2 0a, r g = 12 ?, figure 16 . typical switching energy losses as a function of collector emitter voltage (inductive load, t j = 175c, v ge = 0/15v, i c = 2 0a, r g = 12 ?, 0a 5a 10a 15a 20a 25a 30a 35a 0.0mj 0.4mj 0.8mj 1.2mj 1.6mj 2.0mj 2.4mj e ts * e off *) e on and e ts include losses due to diode recovery e on * ?? ??? ??? ??? ??? 0.0m j 0.4m j 0.8m j 1.2m j 1.6m j 2.0m j 2.4m j e ts * e off *) e on and e ts include losses due to diode recovery e on * 25c 50c 75c 100c 125c 150c 0.0mj 0.2mj 0.4mj 0.6mj 0.8mj 1.0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * 300v 350v 400v 450v 500v 550v 0.0m j 0.2m j 0.4m j 0.6m j 0.8m j 1.0m j 1.2m j 1.4m j 1.6m j 1.8m j 2.0m j e ts * e on * *) e on and e ts include losses due to diode recovery e off
ikp20n60t trenchstop ? series ifag ipc td vls 8 rev. 2.8 18.05.2015 v ge , gate - emitter voltage c, capacitance q ge , gate charge v ce , collector - emitter voltage figure 17 . typical gate charge ( i c =2 0 a) figure 18 . typical capacitance as a function of collector - emitter voltage ( v ge =0v, f = 1 mhz) i c(sc) , short circuit collector current t sc , short circuit withst and time v ge , gate - emittetr voltage v ge , gate - emitetr voltage figure 19 . typical short circuit collector current as a function of gate - emitter voltage ( v ce ? t j ? ? figure 20 . short circuit withstand time as a function of gate - emitter voltage ( v ce =4 00v , start at t j = 25c, t jmax <150c) 0nc 30nc 60nc 90nc 120nc 0v 5v 10v 15v 480v 120v 0v 10v 20v 30v 40v 10pf 100pf 1nf c rss c oss c iss 12v 14v 16v 18v 0a 50a 100a 150a 200a 250a 300a 10v 11v 12v 13v 14v 0s 2s 4s 6s 8s 10s 12s
ikp20n60t trenchstop ? series ifag ipc td vls 9 rev. 2.8 18.05.2015 z thjc , transient thermal imped ance z thjc , transient thermal imped ance t p , pulse width t p , pulse width figure 21 . igbt transient thermal imped ance ( d = t p / t ) figure 22 . diode transient thermal impedance as a function of pulse width ( d = t p / t ) t rr , reverse recovery tim e q rr , reverse recovery cha rge di f /dt , diode current slope di f /dt , diode current slope figure 23 . typical reverse recovery time as a function of diode current slope ( v r =400v, i f =2 0a, dynamic test circuit i n figure e) figure 24 . typical reverse recovery charge as a function of diode current slope ( v r = 400v, i f = 2 0a, dynamic test circuit in figure e) r , ( k / w ) ? , ( s ) ? ? 0.18715 6.925*10 - 2 0.31990 1.085*10 - 2 0.30709 6.791 *10 - 4 0.07041 9.59 *10 - 5 r , ( k / w ) ? , ( s ) ? ? 0.13483 9.207*10 - 2 6.53*10 - 2 0.58146 1.821*10 - 2 0.44456 1.47*10 - 3 0.33997 1.254*10 - 4 1s 10s 100s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 1s 10s 100s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 600a/s 900a/s 1200a/s 0ns 50ns 100ns 150ns 200ns 250ns t j =25c t j =175c 600a/s 900a/s 1200a/s 0.2c 0.4c 0.6c 0.8c 1.0c 1.2c 1.4c 1.6c 1.8c t j =25c t j =175c c 1 = ? 1 / r 1 r 1 r 2 c 2 = ? 2 / r 2
ikp20n60t trenchstop ? series ifag ipc td vls 10 rev. 2.8 18.05.2015 i rr , reverse recovery cur rent di rr /dt , diode peak r ate of fall of reverse recovery current di f /dt , diode current slope di f /dt , diode current slope figure 25 . typical reverse recovery current as a function of diode current slope ( v r = 400v, i f = 2 0a, dynamic test circuit in figure e) figure 26 . typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r =400v, i f =2 0a, dynamic test circuit in figure e) i f , forward current v f , forward voltage v f , forward voltage t j , junction temperature figure 27 . typical diode forward current as a function of forward voltage figure 28 . typical diode forward voltage as a function of junction temperature 600a/s 900a/s 1200a/s 0a 4a 8a 12a 16a 20a 24a t j =25c t j =175c 600a/s 900a/s 1200a/s 0a/s -150a/s -300a/s -450a/s -600a/s -750a/s t j =25c t j =175c 0v 1v 2v 0a 10a 20a 30a 40a 50a 175c t j =25c 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 20a i f =40a 10a
ikp20n60t trenchstop ? series ifag ipc td vls 11 rev. 2.8 18.05.2015 pg - to 220 - 3
ikp20n60t trenchstop ? series ifag ipc td vls 12 rev. 2.8 18.05.2015 figure c. definition of diodes switching characteristics figure d. thermal equivalent circuit figure a. definition of switching times figure b. definition of switching losses i r r m 90% i r r m 10% i r r m di /dt f t r r i f i,v t q s q f t s t f v r di /dt r r q =q q r r s f + t =t t r r s f + p ( t ) 1 2 n t ( t ) j ? 1 1 ? 2 2 n n ? t c r r r r r r
ikp20n60t trenchstop ? series ifag ipc td vls 13 rev. 2.8 18.05.2015 published by infineon technologies ag 81726 munich, germany ? 2015 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims a ny and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices , please contact the nearest infineon technologies office ( www. infineon.com ) . warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume tha t the health of the user or other persons may be endangered.

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